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the a6861 is an n-channel power mosfet driver capable of controlling mosfets connected as a 3-phase solid state relay in phase-isolation applications. the a6861 is intended for automotive systems that must meet asil requirements. in safety critical applications motor isolation is a critical safety requirement which is currently addressed with discrete circuitry or relays. allegro a 2- sil tm products include specific features that compliment proper system design, allowing users to achieve up to asil-d system rating. the a6861 has three independent floating gate drive outputs to maintain the power mosfets in the on state over the full supply range with high phase-voltage slew rates. an integrated charge pump regulator provides the above battery supply voltage necessary to maintain the power mosfets in the on state continuously when the phase voltage is equal to the battery voltage. the charge pump will maintain sufficient gate drive (>7.5 v) for battery voltages down to 4.5 v with 100 k ? gate-source resistors. the three gate drives can be independently controlled by a logic level control input. in typical applications the mosfets will be switched on within 8 s and will switch off within 1 s. an undervoltage monitor checks that the pumped supply voltage is high enough to ensure that the mosfets are maintained in a safe conducting state. 6861-ds, rev. 4 ? 3 floating n-channel mosfet drives ? maintains vgs with 100 k ? gate-source resistors ? integrated charge pump controller ? 4.5 v -50 v supply voltage operating range ? independent ttl input for each phase ? 150 c ambient (165 c junction) continuous ? a 2- sil tm product C device features for safety critical systems automotive 3-phase isolator mosfet driver continued on the next page package: 16-lead tssop with exposed thermal pad (suffix lp) typical application diagram a6861 applications ? 3-phase safety disconnect systems ? electric power steering (eps) ? electric braking ? 3-phase solid state relay driver not to scale. features and benefits description
2 the a6861 is supplied in a 16-lead tssop (lp), with exposed pad for enhanced thermal dissipation. they are lead (pb) free, with 100% matte tin leadframe plating. description (continued) selection guide part number packing package A6861KLPTR-T 13-in. reel, 4000 pieces/reel 16-lead tssopwith exposed thermal pad, 4.4 x 5 mm case absolute maximum ratings 1 characteristic symbol notes rating units load voltage supply v bb C0.3 to 50 v terminal vcp v cp v bb C 0.3 to v bb + 12 v terminal cp1 v cp1 v bb C 12 to v bb + 0.3 v terminal cp2 v cp2 v bb C 0.3 to v cp4 + 0.3 v terminal cp3 v cp3 v bb C 12 to v bb + 0.3 v terminal cp4 v cp4 v cp2 C 0.3 to v cp + 0.3 v terminal enu, env, enw v i C0.3 to 50 v terminal gu, gv, gw v gx v sx C 0.3 to v sx + 12 v terminal su, sv, sw v sx C 6 to v bb + 5 v operating ambient temperature t a limited by power dissipation C40 to 150 oc maximum continuousjunction temperature t j(max) 165 oc transient junction temperature t jt over temperature event not exceeding 10s, lifetime duration not exceeding 10hours, guaranteed by design characterization. 175 oc storage temperature t stg C55 to 150 oc 1 with respect to gnd. ratings apply when no other circuit operating constraints are present. thermal characteristics may require derating at maximum conditions, see application information characteristic symbol test conditions* value units package thermal resistance (junction to ambient) r ja 4-layer pcb based on jedec standard 34 oc/w 1-layer pcb with copper limited to solder pads 43 oc/w package thermal resistance (junction to pad) r jp 2 oc/w *additional thermal data available on the allegro web site. specifications automotive 3-phase isolator mosfet driver a6861 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
3 terminal list table name number description vbb 1 main power supply cp4 2 pump capacitor connection cp3 3 pump capacitor connection cp2 4 pump capacitor connection cp1 5 pump capacitor connection enu 6 u phase enable input env 7 v phase enable input enw 8 w phase enable input gnd 9 ground sw 10 w phase mosfet source reference gw 11 w phase mosfet gate drive sv 12 v phase mosfet source reference gv 13 v phase mosfet gate drive su 14 u phase mosfet source reference gu 15 u phase mosfet gate drive vcp 16 pump supply ta b exposed tab - connect to gnd 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 vcp gu su gv sw gnd sv gw vbb cp4 cp3 cp2 env enw cp1 enu package lp, 16-pin tssop pin-out diagram pin-out diagram and terminal list table automotive 3-phase isolator mosfet driver a6861 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
4 gu su gnd vcp vbb vcp bridge motor gv sv vcp bridge motor gw sw vcp bridge motor vcp battery optional reverse protected supply network protected supply floating gate-drive charge pump enu cp4 cp3 floating gate-drive floating gate-drive cp2 cp1 c r r r r r r cp1 pd gpd gpd gpd pd pd c cp2 c vcp gnd env enw level shift level shift level shift functional block diagram automotive 3-phase isolator mosfet driver a6861 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
5 characteristics symbol test conditions min. typ. max. units supply vbb functional operating range 1 v bb operating. outputs active. 4.5 C 50 v operating. outputs disabled 4 C 50 v no unsafe states. 0 C 50 v vbb quiescent current i bbq gate drive active, v bb = 12 v, sx = gnd. C 10 13.5 ma i bbs gate drive disabled, v bb = 12 v C 5.5 8 ma vcp output voltage w.r.t. v bb v cp v bb > 9v, i vcp > -1 ma [2] 9 10 11 v 6 v < v bb 9 v, i vcp > -1 ma [2] 8 10 11 v 4.5 v < v bb 6 v, i vcp > - 800 a [2] 7.5 9.5 C v vcp static load resistor r cp between vcp and vbb (using 1% tolerance resistor) 100 C C k gate output drive turn-on time t r c load = 10 nf, 20% to 80% C 5 C s turn-off time t r c load = 10 nf, 80% to 20% C 0.5 C s propagation delay C turn on 3 t pon c load = 10 nf, enx high to gx 20% C C 3 s propagation delay C turn off 3 t poff c load = 10 nf, enx low to gx 80% C C 1.5 s turn-on pulse current i gxp C 14 C ma turn-on pulse time t gxp C 12.5 C s on hold current i gxh C 400 C a pull-down on resistor r ds(on)dn t j = 25c, i gx = 10 ma C 5 C t j = 150c, i gx = 10 ma C 10 C gx output high voltage w.r.t. sx, or vbb if sx>vbb v gh v bb > 9 v 8.5 10 12 v 6 v < v bb 9 v 8 10 12 v 4.5 v < v bb 6 v 7.5 9.5 C v gate drive static load resistance r gs between gx and sx (using 1% tolerance resistor) 100 C C k gx output voltage low v gl -10 a < i gx < 10 a C C v sx +0.3 v gx passive pull-down r gpd v gx - v sx < 0.3 v C 950 C k logic inputs & outputs input low voltage v il C C 0.8 v input high voltage v ih 2.0 C C v input hysteresis v ihys 150 300 C mv input pull-down resistor r pd 30 50 70 k diagnostics & protection vcp undervoltage start-up blank timer t cpon C 100 C s vcp undervoltage lockout v cpon v cp w.r.t. v bb. v cp rising 6.2 6.7 7.2 v v cpoff v cp w.r.t. v bb. v cp falling 6.0 6.5 7.0 v 1 function is correct but parameters are not guaranteed below the general limits (6-50v). 2 for input and output current specifcations, negative current is defned as coming out of (sourcing) the specifed device terminal. 3 refer to figure 1. electrical characteristics at t j = -40 to +150c, v bb 6 v to 50 v (unless noted otherwise) automotive 3-phase isolator mosfet driver a6861 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
6 functional description the a6861 is an n-channel power mosfet driver capable of controlling mosfets connected as a 3-phase solid state relay in phase-isolation applications. it has three independent floating gate drive outputs to maintain the power mosfets in the on state over the full supply range when the phase outputs are pwm switched with high phase-voltage slew rates. a charge pump regulator provides the above battery supply volt- age necessary to maintain the power mosfets in the on state continuously when the phase voltage is equal to the battery volt- age. voltage regulation is based on the difference between vbb and vcp. the charge pump will maintain sufficient gate drive (>7.5 v) for battery voltages down to 4.5 v. it is also able to provide the cur- rent taken by gate-source resistors as low as 100 k ? should they be required, between the source and gate of the power mos- fets. the voltage generated by the charge pump can also be used to power circuitry to control the gate-source voltage for a mosfet connected to the main supply to provide reverse battery protec- tion. the three gate drives can be controlled independently by three logic level enable inputs. in typical applications the mosfets will be switched on within 8 s and will switch off within 1 s. an undervoltage monitor checks that the pumped supply voltage is high enough to ensure that the mosfets are maintained in a safe conducting state input & output terminal functions vbb: main power supply. the main power supply should be connected to vbb through a reverse voltage protection circuit. gnd: main power supply return. connect to supply ground. vcp: pumped gate drive voltage. can be used to turn on a mosfet connected to the main supply to provide reverse battery protection. connect a 1 f ceramic capacitor between vcp and vbb. cp1, cp2: pump capacitor connections. connect a 330 nf ceramic capacitor between cp1 and cp2. cp3, cp4: pump capacitor connections. connect a 330 nf ceramic capacitor between cp3 and cp4. enu, env, enw: logic level enable inputs to control the gate drive outputs. gu, gv, gw: floating, gate-drive outputs for external n-channel mosfets. su, sv, sw: load phase connections. these terminals are the reference connections for the floating gate-drive outputs. figure 1: enable inputs to v gs timing enx v gsx t r 20% 80% t f 20% 80% t pon t poff automotive 3-phase isolator mosfet driver a6861 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
7 power supplies a single reverse polarity protected power supply voltage is required. it is recommended that the vbb supply is decoupled to gnd by ceramic capacitors mounted close to the device pins. decoupling capacitors are not required for correct operation but will assist in reducing switching noise conducted to the supply from the charge pump switching circuits. the a6861 will operate within specified parameters with v bb from 6 v to 50 v and will function correctly with a supply down to 4.5 v. this provides a very rugged solution for use in the harsh automotive environment and permits use in start-stop systems. there are no unsafe device states, even at low supply voltage. as the supply voltage rises from 0 v, the gate drive outputs are main- tained in the off state until the gate voltage is sufficiently high to ensure conduction and the outputs are enabled. pump regulator the gate drivers are powered by a regulated charge pump, which provides the voltage above vbb to ensure that the mosfets are fully enhanced with low on-resistance when the source of the mosfet is at the same voltage as v bb . voltage regulation is based on the difference between the vbb and vcp pins. the pumped voltage, v cp , is available at the vcp terminal and is limited to 12 v maximum with respect to v bb . this removes the need for external clamp diodes on the power mosfets to limit the gate source voltage. it also allows the vcp terminal to be used to power circuitry to control a mosfet connected to the main supply to provide reverse battery protection. to provide the continuous low level current required when gate- source resistors are connected to the external mosfets, a pump storage capacitor, typically 1 f, has to be connected between the vcp and vbb terminals. pump capacitors, typically 330 nf, have to be connected between the cp1 and cp2 terminals and between the cp3 and cp4 terminals to provide sufficient charge transfer, especially at low supply voltage. gate drives the a6861 is designed to drive external, low on-resistance, power n-channel mosfets when used in a phase isolation application. the gate drive outputs and the v cp supply will turn the mosfets on in typically 8 s and will maintain the on-state during transients on the source of the mosfets. the gate drive outputs will turn the mosfets off in typically 1 s and will hold them in the off-state during transients on the source. an internal resistor, r gpd , between the gx and sx pins plus an integrated hold-off circuit, will ensure that the gate-source voltage of the mosfet is held close to 0 v even with the power disconnected. this can remove the need for additional gate-source resistors on the isolation mosfets. in any case, if gate-source resistors are mandatory for the application then the pump regulator can provide sufficient current to maintain the mosfet in the on state with a gate-source resistor of as low as 100 k ?. the floating gate-drive outputs for external n-channel mosfets are provided on pins gu, gv, and gw. gx=1 (or high) means that the upper half of the driver is turned on and current will be sourced to the gate of the mosfet in the phase isolation circuit, turning it on. gx=0 (or low) means that the lower half of the driver is turned on and will sink current from the external mos- fets gate to the respective sx terminal, turning it off. the reference points for the floating drives are the load phase connections, su, sv, and sw. the discharge current from the floating mosfet gate capacitance flows through these connec- tions. in some applications it may be necessary to provide a current recirculation path when the motor load is isolated. this will be necessary in situations where the motor driver does not reduce the load current to zero before the isolation mosfets are turned off. the recirculation path can be provided by connecting a suitably rated power diode to the motor side of the isolation mosfets and gnd. see the functional block diagram for more details. only three diodes are required since the source to drain diodes in the isolation and bridge mosfets provide a recirculation path to the battery connection. logic control inputs three ttl level digital inputs, enu, env, & enw, provide independent control for each gate drive. the three enable inputs directly control their respective gate drive outputs. when an enable input is high the corresponding gate drive output will be on. these inputs have nominal hysteresis of 300 mv to improve noise performance and can be shorted to v bb without damage. automotive 3-phase isolator mosfet driver a6861 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
8 supply monitor the a6861 includes undervoltage detection on the charge pump output. if the voltage at the charge pump output, v cp , drops below the falling undervoltage threshold, v cpoff , then the gate drive outputs will be held in the off state. they will remain in that state until v cp rises above the rising undervoltage threshold v cpon . input and output structures vesd enu env enw 200 k 50 k 4 v figure 2: enu, env, enw inputs vesd vcp r gpd gu gv gw su sv sw 6 v 11 v figure 3: drive outputs vesd cp1 cp3 cp2 cp4 vcp vbb 12 v 12 v 12 v 16 v 16 v 20 v figure 4: supplies automotive 3-phase isolator mosfet driver a6861 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
9 battery voltage reversal protection the charge pump output voltage may be used to drive a reverse- connected battery protection circuit as illustrated in figure 5. transistor q1 is an n-channel power mosfet selected to create a low voltage drop at the full current rated for the motor drive system. it is connected with source and drain pins reversed from the normal biased condition. during power up the initial system current is supplied to vbb through the forward biased parasitic source to drain diode until v cp has exceeded the threshold volt- age of q1 and turned it on. when the battery voltage is reversed the voltage between vbb and vcp is zero, the gate source voltage on q1 is zero and its source to drain diode becomes reverse biased. in this condition q1 blocks current flow to vbb and the voltage between vbb and gnd remains at zero. transistor q2 is a normally connected p channel, small sig- nal mosfet used to control the gate of q1 in the normal and reversed battery voltage condition. both q1 and q2 must be cor- rectly rated for the full peak reversed battery voltage. resistor r1 is used to control the gate to source voltage of q1 and is powered from the v cp supply. to reduce the current drain from vcp the value of r1 should be a minimum defined for r cp , 100 k. battery vcp protected vbb q2 q1 r1 figure 5: indicative reverse voltage protection scheme automotive 3-phase isolator mosfet driver a6861 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
10 figure 6: lp package, 16-lead tssop with exposed pad a 1.20 (max) 0.15 0.00 0.30 0.19 0.20 0.09 8o 0o 0.60 0.15 1.00 (ref) c seating plane c 0.10 16x 0.65 (bsc) 0.29 (bsc) 21 16 5.00 0.10 4.40 0.10 6.40 0.20 gauge plane seating plane a b b c d exposed thermal pad (bottom surface); dimensions may vary with device 6.1 0 0.65 0.45 1.70 3.00 (nom) 3.00 16 21 1 c d branded face 3 (nom) 3 (nom) for reference only ? not for tooling use (reference mo-153 abt) dimensions in millimeters. not to scale dimensions exclusive of mold ?ash, gate burrs, and dambar protrusions exact case and lead con?guration at supplier discretion within limits shown pcb layout reference vi ew terminal #1 mark area reference land pattern layout (reference ipc7351 sop65p640x110-17m); all pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary to meet application process requirements and pcb layout tolerances; when mounting on a multilayer pcb, thermal vias at the exposed thermal pad land can improve thermal dissipation (reference eia/jedec standard jesd51-5) branding scale and appearance at supplier discretion standard branding reference view yyww nnnnnnn llll = device part number = supplier emblem = last two digits of year of manufacture = week of manufacture = characters 5-8 of lot number n y w l package outline drawing automotive 3-phase isolator mosfet driver a6861 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
11 copyright ?2014-16, allegro microsystems, llc allegro microsystems, llc (allegro) products may, in certain cases, be promoted to assist with applications related to safety. allegros objec- tive is to provide an opportunity for customers to design and develop their own end-products that meet functional safety standards and requirements. however, allegros products are not to be used in any devices or systems in which a failure of allegros product can reasonably be expected to cause bodily harm. customer agrees that it has sole responsibility for compliance with all applicable laws, regulations, and safety-related requirements regarding its products. customer shall indemnify allegro and its representatives against any damages arising out of the use of any allegro products in safety-critical applications. allegro assumes no responsibility for the intended use of its products, nor for any infringement of patents or other rights of third parties which may result from their use. allegro reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. before placing an order, customer is cautioned to verify the detailed specifications. for the latest version of this document, visit our website: www.allegromicro.com revision date change C february 26, 2014 initial release 1 august 25, 2014 various text edits throughout; reformatted document 2 may 28, 2015 corrected typo on package outline drawing 3 july 20, 2016 updated test conditions for r cp and r gs (page 5) 4 august 10, 2016 updated vcp static load resistor and pull-down on resistor characteristic names (page 5) automotive 3-phase isolator mosfet driver a6861 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com

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